RF inductors and capacitors integrated on silicon chip by CMOS compatible Cu interconnect technology

Abstract High-Q inductors and high-density capacitors have been designed and fabricated with a post-process of additional metal layers on the top of interconnect layers. The fabrication was carried out with advanced Cu interconnect technology, which was compatible with nowadays CMOS backend of line. The Qmax of inductors with inductance from 0.4 to 11 nH was over 11 on low-resistivity silicon substrates. Two kinds of structures of on-chip capacitors, MIM and MIMIM, have been studied. A capacitance of 1.75 fF/μm2 has been achieved with MIMIM structure using Si3N4 as dielectric.

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