Characterization of the passivation of CdS thin films grown by chemical bath deposition on InP
暂无分享,去创建一个
G. Contreras-Puente | I. Riech | J. Aguilar-Hernandez | A. Iribarren | O. V. Galán | J. Larramendi | G. Pena
[1] O. Zelaya-Ángel,et al. Modification of the properties of chemically deposited CdS thin films grown under magnetic field and variable growing parameters , 2001 .
[2] H. Vargas,et al. Photoacoustic determination of the recombination velocity at the AlGaAs/GaAs heterostructure interface , 1999 .
[3] H. Vargas,et al. On the use of the photoacoustic technique for monitoring the surface recombination velocity at SiN:H/Si interfaces , 1999 .
[4] J. P. Lorenzo,et al. Electrical Characterization of CdS Passivation on InP , 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).
[5] J. P. Lorenzo,et al. Cadmium sulfide surface stabilization for InP-based optoelectronic devices , 1996 .
[6] D. Lincot,et al. Study of CdS Epitaxial Films Chemically Deposited from Aqueous Solutions on InP Single Crystals , 1995 .
[7] Joseph P. Lorenzo,et al. Indium phosphide passivation using thin layers of cadmium sulfide , 1995 .
[8] Leite,et al. Photoacoustic investigation of semiconductors: Influence of carrier diffusion and recombination in PbTe and Si. , 1989, Physical review. B, Condensed matter.
[9] D. Lile,et al. The sulfurized InP surface , 1989 .