A 50 to 146 GHz Power Amplifier Based on Magnetic Transformers and Distributed Gain Cells

A monolithic millimeter-wave integrated circuit power amplifier covering the entire V-, W- and F-band is presented. The amplifier applies magnetic distributed transformers in combination with traveling wave gain cells to achieve a -3 dB bandwidth that spans from 50 to 146 GHz, 12 dB gain and a maximum measured output power of 15 dBm. With a relative bandwidth of 98.3% the PA achieves the highest bandwidth reported for power amplifiers operating at around 100 GHz to date.

[1]  O. Ambacher,et al.  35 nm mHEMT Technology for THz and ultra low noise applications , 2013, 2013 International Conference on Indium Phosphide and Related Materials (IPRM).

[2]  Sanggeun Jeon,et al.  A Fully-Integrated 40–222 GHz InP HBT Distributed Amplifier , 2014, IEEE Microwave and Wireless Components Letters.

[3]  U.R. Pfeiffer,et al.  A 23-dBm 60-GHz Distributed Active Transformer in a Silicon Process Technology , 2007, IEEE Transactions on Microwave Theory and Techniques.

[4]  H. Massler,et al.  Design and evaluation of realizable and compact low-impedance transmission lines for two top-metal-layer semiconductor processes , 2014, 2014 Asia-Pacific Microwave Conference.

[5]  Y. C. Leong,et al.  65-145 GHz InP MMIC HEMT medium power amplifiers , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[6]  M. Micovic,et al.  70–105 GHz wideband GaN power amplifiers , 2012, 2012 7th European Microwave Integrated Circuit Conference.

[7]  Ali Hajimiri,et al.  Distributed active transformer-a new power-combining and impedance-transformation technique , 2002 .

[8]  Huei Wang,et al.  Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances , 2013, IEEE Transactions on Microwave Theory and Techniques.