Charge transfer efficiency in proton damaged CCD's
暂无分享,去创建一个
[1] M. Jamal Deen,et al. Effects of space-radiation damage and temperature on CCD noise for the Lyman FUSE mission , 1993, Defense, Security, and Sensing.
[2] J. Ziegler,et al. stopping and range of ions in solids , 1985 .
[3] Michael F. Tompsett,et al. The quantitative effects of interface states on the performance of charge coupled devices , 1971 .
[4] Aaas News,et al. Book Reviews , 1893, Buffalo Medical and Surgical Journal.
[5] B. Johlander,et al. Techniques for minimizing space proton damage in scientific charge coupled devices , 1991 .
[6] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[7] N. S. Saks,et al. Investigation of Bulk Electron Traps Created by Fast Neutron Irradiation in a Buried N-Channel CCD , 1977, IEEE Transactions on Nuclear Science.
[8] D. Wells,et al. Fits: a flexible image transport system , 1981 .
[9] H. Kraner,et al. Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors , 1992 .
[10] A. Holland. The effect of bulk traps in proton irradiated EEV CCDs , 1993 .
[11] D. A. Fraser,et al. The physics of semiconductor devices , 1986 .
[12] G. Hopkinson,et al. Proton-induced charge transfer degradation in CCDs for near-room temperature applications , 1994 .
[13] P. Marshall,et al. Proton effects in charge-coupled devices , 1996 .
[14] Victor A.J. Van Lint,et al. The physics of radiation damage in particle detectors , 1987 .
[15] M. F. Tompsett,et al. II-3 the effects of bulk traps on the performance of bulk channel charge-coupled devices , 1974 .
[16] S. Watts,et al. Degradation of the charge transfer efficiency of a buried channel charge coupled device due to radiation damage by a beta source , 1991, RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.
[17] M. J. Deen,et al. Effects of space radiation damage and temperature on the noise in CCDs and LDD MOS transistors , 1993 .
[18] Dexter W. Duncan,et al. Results from proton damage tests on the Michelson Doppler Imager CCD for SOHO , 1993, Electronic Imaging.
[19] Ping Yang,et al. Low frequency noise in polysilicon‐emitter bipolar junction transistors , 1995 .
[20] P. W. Marshall,et al. Displacement damage effects in mixed particle environments for shielded spacecraft CCDs , 1993 .
[21] Edmund K. Banghart,et al. A model for charge transfer in buried-channel charge-coupled devices at low temperature , 1991 .
[22] James R. Janesick,et al. Effects of proton damage on charge-coupled devices , 1991, Medical Imaging.