Charge transfer efficiency in proton damaged CCD's

We have performed detailed measurements of the charge transfer efficiency (CTE) in a thinned, backside-illuminated imaging charge-coupled device (CCD). The device had been damaged in three separate sections by proton radiation typical of that which a CCD would receive in space-borne experiments, nuclear imaging, or particle detection. We examined CTE as a function of signal level, temperature, and radiation dose. The dominant factor affecting the CTE in radiation-damaged CCD's is seen to be trapping by bulk states. We present a simple physical model for trapping as a function of transfer rate, trap concentration, and temperature. We have made calculations using this model and arrived at predictions which closely match the measured results. The CTE was also observed to have a nonlinear dependence on signal level. Using two-dimensional device simulations to examine the distribution of the charge packets in the CCD channel over a range of signal levels, we were able to explain the observed variation.

[1]  M. Jamal Deen,et al.  Effects of space-radiation damage and temperature on CCD noise for the Lyman FUSE mission , 1993, Defense, Security, and Sensing.

[2]  J. Ziegler,et al.  stopping and range of ions in solids , 1985 .

[3]  Michael F. Tompsett,et al.  The quantitative effects of interface states on the performance of charge coupled devices , 1971 .

[4]  Aaas News,et al.  Book Reviews , 1893, Buffalo Medical and Surgical Journal.

[5]  B. Johlander,et al.  Techniques for minimizing space proton damage in scientific charge coupled devices , 1991 .

[6]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[7]  N. S. Saks,et al.  Investigation of Bulk Electron Traps Created by Fast Neutron Irradiation in a Buried N-Channel CCD , 1977, IEEE Transactions on Nuclear Science.

[8]  D. Wells,et al.  Fits: a flexible image transport system , 1981 .

[9]  H. Kraner,et al.  Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors , 1992 .

[10]  A. Holland.  The effect of bulk traps in proton irradiated EEV CCDs , 1993 .

[11]  D. A. Fraser,et al.  The physics of semiconductor devices , 1986 .

[12]  G. Hopkinson,et al.  Proton-induced charge transfer degradation in CCDs for near-room temperature applications , 1994 .

[13]  P. Marshall,et al.  Proton effects in charge-coupled devices , 1996 .

[14]  Victor A.J. Van Lint,et al.  The physics of radiation damage in particle detectors , 1987 .

[15]  M. F. Tompsett,et al.  II-3 the effects of bulk traps on the performance of bulk channel charge-coupled devices , 1974 .

[16]  S. Watts,et al.  Degradation of the charge transfer efficiency of a buried channel charge coupled device due to radiation damage by a beta source , 1991, RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.

[17]  M. J. Deen,et al.  Effects of space radiation damage and temperature on the noise in CCDs and LDD MOS transistors , 1993 .

[18]  Dexter W. Duncan,et al.  Results from proton damage tests on the Michelson Doppler Imager CCD for SOHO , 1993, Electronic Imaging.

[19]  Ping Yang,et al.  Low frequency noise in polysilicon‐emitter bipolar junction transistors , 1995 .

[20]  P. W. Marshall,et al.  Displacement damage effects in mixed particle environments for shielded spacecraft CCDs , 1993 .

[21]  Edmund K. Banghart,et al.  A model for charge transfer in buried-channel charge-coupled devices at low temperature , 1991 .

[22]  James R. Janesick,et al.  Effects of proton damage on charge-coupled devices , 1991, Medical Imaging.