Application of diamond-like layers as gate dielectric in metal/insulator/semiconductor transistor

Abstract In this work the application of diamond-like carbon (DLC) layers formed by r.f. plasma-enhanced chemical vapour deposition (PECVD) as the dielectric layer in a metal/insulator/semiconductor (MIS) transistor (MISFET) is presented. In the course of this work the technology has been developed, enabling the manufacture of MIS transistors with DLC layers as gate insulator. The r.f. PECVD method was used for the formation of DLC layers. The transistors, with channel sizes ranging from 10 × 10 μm 2 to 200 × 200 μm 2 , were manufactured in a microelectronics standard technological laboratory. Selective etching of source and drain contact holes was performed by a “lift off” technique, which required some modifications to the typical MOSFET fabrication procedure. Auger electron spectroscopy measurements proved the high purity of the gate dielectric DLC films and the penetration of carbon into the silicon substrate. Both the measured electrical characteristics, transient and output, confirmed the transistor action of the manufactured MISFET.

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