Compact conversion and cyclostationary noise modeling of pn-junction diodes in low-injection. Part II. Discussion

Starting from the compact conversion and cyclostationary p-n diode noise model presented in the companion paper , we present an extensive validation based on comparisons with physics-based numerical simulations. Furthermore, we discuss the validity of two widely exploited system-oriented cyclostationary noise modeling approaches, based on the modulation of small-signal stationary noise spectra. We demonstrate that care must be exerted in the choice of the modulation scheme, unless the intrinsic diode noise is purely white, in which case a simple modulated shot noise approach can provide, with proper inclusion of parasitics, satisfactorily accurate results.

[1]  H. Grubin The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[2]  A. Neri,et al.  State of the art and present trends in nonlinear microwave CAD techniques , 1988 .

[3]  Fabrizio Bonani,et al.  An efficient approach to noise analysis through multidimensional physics-based models , 1998 .

[4]  C. Dragone Analysis of thermal and shot noise in pumped resistive diodes , 1968 .

[5]  G. Ghione,et al.  New, closed-form compact model for the cyclostationary noise and LS conversion behaviour of RF junction diodes , 2002, Digest. International Electron Devices Meeting,.

[6]  Fabrizio Bonani,et al.  Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications , 2003 .

[7]  Fabrizio Bonani,et al.  Noise source modeling for cyclostationary noise analysis in large-signal device operation , 2002 .

[8]  T. Arnborg,et al.  Device simulation for RF applications , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[9]  Franco Mastri,et al.  General noise analysis of nonlinear microwave circuits by the piecewise harmonic-balance technique , 1994 .

[10]  G. Ghione,et al.  Compact modelling of cyclostationary noise in semiconductor devices: a critical discussion , 2002, Digest. International Electron Devices Meeting,.

[11]  Alper Demir,et al.  Analysis and Simulation of Noise in Nonlinear Electronic Circuits and Systems , 1997 .

[12]  Francois Danneville,et al.  Noise modeling in MESFET and HEMT mixers using a uniform noisy line model , 1998 .

[13]  Mark E. Law,et al.  Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models , 2003 .

[14]  Alberto L. Sangiovanni-Vincentelli,et al.  Time-domain non-Monte Carlo noise simulation for nonlinear dynamic circuits with arbitrary excitations , 1994, ICCAD '94.

[15]  G. Ghione,et al.  Compact conversion and cyclostationary noise modeling of pn-junction diodes in low-injection. Part I. Model derivation , 2004, IEEE Transactions on Electron Devices.

[16]  Fabrizio Bonani,et al.  Noise in semiconductor devices , 2001 .

[17]  Stephen A. Maas,et al.  Nonlinear microwave circuits , 1988 .

[18]  Fabrizio Bonani,et al.  Noise in semiconductor devices: modelling and simulation , 2001 .

[19]  Marco Pirola,et al.  A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation , 2001 .