论文信息 - Electrical properties of metal/Si1−xGex/Si(100) heterojunctions

Electrical properties of metal/Si1−xGex/Si(100) heterojunctions

Abstract The electrical properties of Zr/ and Ti/Si 1− x Ge x /(100)Si heterostructures have been examined. The Schottky barrier heights (SBH's) of as-deposited diodes determined fromI-V characteristics are 0.53 and 0.55 eV for Zn/ and Ti/n-Si 0.8 Ge 0.2 , respectively. It can be seen that p-Si 0.8 Ge 0.2 diodes tend to have smaller SBH's than n-Si 0.8 Ge 0.2 ones for both metals. This fact is consistent with the contact resistivity measured for Zr/n + - and Zr/p + -Si 0.8 Ge 0.2 /(100)Si.

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