Radiation effects in GaN materials and devices
暂无分享,去创建一个
Stephen J. Pearton | Ji Hyun Kim | F. Ren | S. Pearton | A. Polyakov | Fan Ren | Alexander Y. Polyakov | Patrick Frenzer | Li Liu | Li Liu | P. Frenzer | J. Kim
[1] Hongqi Xu,et al. Transport properties of proton-irradiated GaAs/AlGaAs two-dimensional electron gas structures , 2000 .
[2] Walter Kruppa,et al. Trapping effects and microwave power performance in AlGaN/GaN HEMTs , 2001 .
[3] N. B. Smirnov,et al. Studies of Interface States in Sc2O3 ∕ GaN , MgO ∕ GaN , and MgScO ∕ GaN structures , 2007 .
[4] David C. Look,et al. Electron-Irradiation-Induced Deep Level in n -Type GaN , 1998 .
[5] G. Umana-Membreno,et al. /sup 60/Co gamma irradiation effects on n-GaN Schottky diodes , 2003 .
[6] R. Dudek,et al. Proton radiation damage at low temperature in GaAs and GaN light-emitting diodes , 2004, IEEE Transactions on Nuclear Science.
[7] R. Wilkins,et al. The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors , 2004, IEEE Transactions on Nuclear Science.
[8] Akira Sakai,et al. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy , 1997 .
[9] G. D. Watkins,et al. Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance , 2004 .
[10] Van de Walle CG,et al. Atomic geometry and electronic structure of native defects in GaN. , 1994, Physical review. B, Condensed matter.
[11] Fernando Agulló-Rueda,et al. Giant enhancement of material damage associated to electronic excitation during ion irradiation: The case of LiNbO3 , 2009 .
[12] F. D. Auret,et al. Field-enhanced emission rate and electronic properties of a defect introduced in n-GaN by 5.4 MeV He-ion irradiation , 1999 .
[13] John D. Dow,et al. N vacancies in AlxGa1−xN , 1992 .
[14] K. Baik,et al. Changes in electrical and optical properties of p-AlGaN due to proton implantation , 2004 .
[15] A. Chantre,et al. Deep-level optical spectroscopy in GaAs , 1981 .
[16] L. Eastman,et al. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs , 2000, IEEE Electron Device Letters.
[17] Marek Osinski,et al. Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes , 1997 .
[18] B. H. Rose,et al. Proton damage effects on light emitting diodes , 1982 .
[19] N. B. Smirnov,et al. Deep traps in high resistivity AlGaN films , 1998 .
[20] Chennupati Jagadish,et al. Lattice damage produced in GaN by swift heavy ions , 2004 .
[21] Briggs,et al. Native defects in gallium nitride. , 1995, Physical review. B, Condensed matter.
[22] Lorinda Wu,et al. Electrical defects introduced during high-temperature irradiation of GaN and AlGaN , 2003 .
[23] N. B. Smirnov,et al. Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN , 2007 .
[24] Pierre Gibart,et al. Radiation induced defects in MOVPE grown n-GaN , 2000 .
[25] E. Haller,et al. p‐type InN and In‐rich InGaN , 2007 .
[26] K. Fujito,et al. High‐quality nonpolar m ‐plane GaN substrates grown by HVPE , 2008 .
[27] N. B. Smirnov,et al. Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors , 2003 .
[28] V. V. Emtsev,et al. Radiation-induced defects in n-type GaN and InN , 2001 .
[29] Ferdinand Scholz,et al. Optical detection of magnetic resonance in electron-irradiated GaN , 1997 .
[30] Mizuta,et al. Detection of interstitial Ga in GaN , 2000, Physical review letters.
[31] Rishabh Mehandru,et al. Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors , 2002 .
[32] J. Tersoff. Summary Abstract: Failure of the common anion rule for lattice‐matched heterojunctions , 1986 .
[33] N. B. Smirnov,et al. Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth , 2008 .
[34] Igor L. Krestnikov,et al. Effect of Annealing on Defects in As‐Grown and γ‐Ray Irradiated n‐GaN Layers , 1999 .
[35] Lester F. Eastman,et al. Undoped AlGaN/GaN HEMTs for microwave power amplification , 2001 .
[36] Chennupati Jagadish,et al. Effect of ion species on the accumulation of ion-beam damage in GaN , 2001 .
[37] N. B. Smirnov,et al. Fermi level pinning in heavily neutron-irradiated GaN , 2006 .
[38] Isamu Akasaki,et al. Photoluminescence of GaN: Effect of electron irradiation , 1998 .
[39] F. Ren,et al. Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors , 2003 .
[40] S. Pearton,et al. Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions , 2008 .
[41] N. B. Smirnov,et al. Neutron irradiation effects in p‐GaN , 2006 .
[43] U. Mishra,et al. AlGaN/GaN HEMTs-an overview of device operation and applications , 2002, Proc. IEEE.
[44] S. M. Khanna,et al. Spectral properties of proton irradiated gallium nitride blue diodes , 2001 .
[45] T. Wosinski,et al. Evidence for the electron traps at dislocations in GaAs crystals , 1989 .
[46] Umesh K. Mishra,et al. Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors , 2003 .
[47] Abhinav Kranti,et al. Impact of strain relaxation of AlmGa1−mN layer on 2-DEG sheet charge density and current voltage characteristics of lattice mismatched AlmGa1−mN/GaN HEMTs , 2002 .
[48] Michael S. Shur,et al. Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors , 2001 .
[49] peixiong zhao,et al. Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers , 2004, IEEE Transactions on Nuclear Science.
[50] I. Monnet,et al. Swift heavy ions effects in III-V nitrides , 2008 .
[51] W. Walukiewicz. Mechanism of Schottky barrier formation: The role of amphoteric native defects , 1987 .
[52] Patrick Fournier,et al. Transport properties of proton-irradiated gallium nitride-based two-dimensional electron-gas system , 2002 .
[53] T. Kachi,et al. Evaluation of dislocation‐related defects in GaN using deep‐level transient spectroscopy , 2007 .
[54] Jaime A. Freitas,et al. On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy , 1996 .
[55] N. B. Smirnov,et al. Electron irradiation of AlGaN /GaN and AlN /GaN heterojunctions , 2008 .
[56] David C. Look,et al. On the main irradiation-induced defect in GaN , 2000 .
[57] John M. Zavada,et al. Proton implantation effects on electrical and luminescent properties of p-GaN , 2003 .
[58] N. B. Smirnov,et al. Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations , 2008 .
[59] Richard Wilkins,et al. Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors , 2003 .
[60] Toshio Ogino,et al. Mechanism of Yellow Luminescence in GaN , 1980 .
[61] Ronald D. Schrimpf,et al. Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence , 2003 .
[62] A. Houdayer,et al. Radiation hardness of gallium nitride , 2002 .
[63] Stephen J. Pearton,et al. Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures , 2005 .
[64] J. Takahashi,et al. Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN , 2002 .
[65] H. Morkoç,et al. Luminescence properties of defects in GaN , 2005 .
[66] A. Mircea,et al. Detailed electrical characterisation of the deep Cr acceptor in GaAs , 1980 .
[67] S. Kucheyev,et al. Dynamic annealing in III-nitrides under ion bombardment , 2004 .
[68] Theeradetch Detchprohm,et al. Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy , 1993 .
[69] H. Kim,et al. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs , 2001, IEEE Electron Device Letters.
[70] C. Gaquiere,et al. Current instabilities in GaN-based devices , 2001, IEEE Electron Device Letters.
[71] Pierre Gibart,et al. Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation , 1998 .
[72] Jacek B. Jasinski,et al. Electron beam and optical depth profiling of quasibulk GaN , 2000 .
[73] D. C. Reynolds,et al. Defect Donor and Acceptor in GaN , 1997 .
[74] Stephen J. Pearton,et al. Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers , 2006 .
[75] N. B. Smirnov,et al. Electron Irradiation Effects in GaN ∕ InGaN Multiple Quantum Well Structures , 2008 .
[76] Pierre Gibart,et al. Proton bombardment-induced electron traps in epitaxially grown n-GaN , 1999 .
[77] N. B. Smirnov,et al. Neutron transmutation doping effects in GaN , 2010 .
[78] Oleg Mitrofanov,et al. Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy , 2003 .
[79] Amir Dabiran,et al. Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors , 2002 .
[80] N. B. Smirnov,et al. Effects of proton implantation on electrical and recombination properties of n-GaN , 2000 .
[81] N. B. Smirnov,et al. Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films , 2007 .
[82] A. Y. Polyakov,et al. Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films , 1998 .
[83] Theeradetch Detchprohm,et al. Deep levels in the upper band-gap region of lightly Mg-doped GaN , 1996 .
[84] N. B. Smirnov,et al. Fast neutron irradiation effects in n-GaN , 2007 .
[85] N. B. Smirnov,et al. Deep Hole Traps in N-GaN Films Grown by Hydride Vapor Phase Epitaxy , 2002 .
[86] B. R. Gossick,et al. DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS , 1959 .
[87] Stephen J. Pearton,et al. Neutron irradiation effects in undoped n-AlGaN , 2006 .
[88] S. Cai,et al. Annealing behavior of a proton irradiated Al{sub x}Ga{sub 1{minus}x}N/GaN high electron mobility transistor grown by MBE , 2000 .
[89] John M. Zavada,et al. Proton implantation effects on electrical and optical properties of undoped AlGaN with high Al mole fraction , 2003 .
[90] Amir Dabiran,et al. dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors , 2001 .
[91] J. Keinonen,et al. Molecular dynamics study of damage accumulation in GaN during ion beam irradiation , 2003 .