Effects of H2 plasma treatment on properties of ZnO:Al thin films prepared by RF magnetron sputtering

article i nfo Al-doped ZnO (AZO) thin films were prepared on glass substrates by radio-frequency magnetron sputtering at deposition temperatures ranging from room temperature (RT) to 300 °C for transparent electrode applications. This study investigates the effects of H2 plasma treatment on structural, electrical, and optical properties of AZO thin films. Plasma treatment was conducted at 300 °C using a plasma-enhanced chemical vapor deposition system for potential large size substrate applications. The crystal structure of plasma treated AZO films did not change considerably, but the surface roughness and surface grain size increased slightly. Improvement in electrical properties was strongly dependent on the deposition temperature. When the depositiontemperaturerangedfrom300 °CtoRT,theresistivityofplasmatreated filmsdecreasedsignificantly by 22.7% to 97.6%, and the optical bandgap broadened by 0.011 to 0.076 eV.

[1]  X Wang,et al.  X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films , 2000 .

[2]  M. Jeong,et al.  Post-annealing of Al-doped ZnO films in hydrogen atmosphere , 2005 .

[3]  W. Kim,et al.  Characteristics of hydrogen co-doped ZnO : Al thin films , 2008 .

[4]  Fang-Hsing Wang,et al.  Enhanced conductivity of aluminum doped ZnO films by hydrogen plasma treatment , 2010 .

[5]  A. Mosser,et al.  Effect of oxygen partial pressure on the structural and optical properties of dc sputtered ITO thin films , 2009 .

[6]  K. L. Chopra,et al.  Effect of hydrogen plasma treatment on transparent conducting oxides , 1986 .

[7]  C. Santilli,et al.  Transparent and conductive ZnO:Al thin films prepared by sol-gel dip-coating , 2004 .

[8]  Y. Cheng,et al.  Effects of hydrogen flux on the properties of Al-doped ZnO films sputtered in Ar + H2 ambient at low temperature , 2007 .

[9]  S. Basu,et al.  Improved zinc oxide film for gas sensor applications , 2002 .

[10]  Gong Zhang,et al.  Properties of transparent conductive ZnO: Al thin films prepared by magnetron sputtering , 2004, Microelectron. J..

[11]  Kun Ho Kim,et al.  Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering , 1997 .

[12]  T. Welzel,et al.  Ion energy distributions in AZO magnetron sputtering from planar and rotatable magnetrons , 2009 .

[13]  R. A. Wibowo,et al.  Properties of Al-doped ZnO thin film sputtered from powder compacted target , 2006 .

[14]  Y. Sung,et al.  Transparent conductive characteristics of Ti:ITO films deposited by RF magnetron sputtering at low substrate temperature , 2010 .

[15]  G. Chung,et al.  The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering , 2011 .

[16]  S. Yun,et al.  Effect of rf-power density on the resistivity of Ga-doped ZnO film deposited by rf-magnetron sputter deposition technique , 2010 .

[17]  M. Hon,et al.  The effect of deposition temperature on the properties of Al-doped zinc oxide thin films , 2001 .

[18]  S. Myers,et al.  Quantitative comparisons of dissolved hydrogen density and the electrical and optical properties of ZnO , 2003 .

[19]  M. Yoshino,et al.  Effects of dopants and hydrogen on the electrical conductivity of ZnO , 2004 .

[20]  Dejie Li,et al.  Fabrication and vacuum annealing of transparent conductive AZO thin films prepared by DC magnetron sputtering , 2002 .

[21]  M. Jeong,et al.  Stabilization in electrical characteristics of hydrogen-annealed ZnO:Al films , 2007 .

[22]  H. Mohamed,et al.  Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications , 2006 .

[23]  H. Nanto,et al.  The stability of aluminium-doped ZnO transparent electrodes fabricated by sputtering , 1986 .

[24]  Mercedes Martínez,et al.  Deposition of transparent and conductive Al-doped ZnO thin films for photovoltaic solar cells , 1997 .

[25]  Li-ping Zhu,et al.  Highly transparent conductive and near-infrared reflective ZnO:Al thin films , 2010 .

[26]  R. Yakimova,et al.  Effect of oxygen exposure on the electrical conductivity and gas sensitivity of nanostructured ZnO films , 2009 .

[27]  Improved UV emission of zinc oxide through hyrogen doping in pulse-modulated high-power ICP , 2006 .

[28]  Hamberg,et al.  Band-gap tailoring of ZnO by means of heavy Al doping. , 1988, Physical review. B, Condensed matter.

[29]  Sheng Wang,et al.  Enhanced near-band-edge emission and field emission properties from plasma treated ZnO nanowires , 2010 .

[30]  A. Aberle,et al.  Investigation of lateral parameter variations of Al-doped zinc oxide films prepared on glass substrates by rf magnetron sputtering , 2002 .

[31]  Y. Su,et al.  Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering , 2004 .

[32]  S. Myong,et al.  Highly stable and textured hydrogenated ZnO thin films , 2003 .

[33]  S. Major,et al.  Effect of substrate temperature on the structure and optical properties of ZnO thin films deposited by reactive rf magnetron sputtering , 2007 .

[34]  K. Lim,et al.  HIGHLY TEXTURED AND CONDUCTIVE UNDOPED ZNO FILM USING HYDROGEN POST-TREATMENT , 1997 .

[35]  N. Ohashi,et al.  Lowered stimulated emission threshold of zinc oxide by hydrogen doping with pulsed argon–hydrogen plasma , 2007 .

[36]  Z. Yin,et al.  Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment , 2009 .

[37]  Fang-Hsing Wang,et al.  Influence of hydrogen plasma treatment on Al-doped ZnO thin films for amorphous silicon thin film solar cells , 2011 .

[38]  M. Jeong,et al.  Properties of transparent conductive ZnO:Al films prepared by co-sputtering , 2005 .

[39]  Jae Bin Lee,et al.  Microstructural evolution and preferred orientation change of radio‐frequency‐magnetron sputtered ZnO thin films , 1996 .

[40]  E. Burstein.  Anomalous Optical Absorption Limit in InSb , 1954 .

[41]  Effects of H 2 Annealing Treatment on Photoluminescence and Structure of ZnO : Al / Al2 O 3 Grown by Radio-Frequency Magnetron Sputtering , 2003 .

[42]  D. Peng,et al.  Synthesis and characterization of ferromagnetic transparent conductive films , 2009 .

[43]  W. Jung,et al.  The low temperature synthesis of Al doped ZnO films on glass and polymer using pulsed co-magnetron sputtering: H2 effect , 2006 .

[44]  Hirotoshi Sato,et al.  Highly conductive and transparent ZnO:Al thin films prepared on high-temperature substrates by d.c. magnetron sputtering , 1992 .

[45]  Shinzo Takata,et al.  Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering , 1985 .

[46]  Akio Suzuki,et al.  Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition , 2003 .

[47]  E. Budianu,et al.  Optical and structural investigation of ZnO thin films prepared by chemical vapor deposition (CVD) , 2002 .

[48]  Bingchu Yang,et al.  Effect of substrate temperature on the structural and optical properties of ZnO and Al-doped ZnO thin films prepared by dc magnetron sputtering , 2009 .

[49]  K. Yoon,et al.  Optical and electrical properties of Ga2O3-doped ZnO films prepared by r.f. sputtering , 1990 .

[50]  D. C. Reynolds,et al.  Remote hydrogen plasma doping of single crystal ZnO , 2004 .

[51]  S. Ray,et al.  Degradation studies of transparent conducting oxide: a substrate for microcrystalline silicon thin film solar cells , 2005 .

[52]  B. Houng,et al.  Structure and properties of Ag embedded aluminum doped ZnO nanocomposite thin films prepared through a sol–gel process , 2006 .

[53]  D. Mergel,et al.  ITO films for antireflective and antistatic tube coatings prepared by d.c. magnetron sputtering , 1996 .

[54]  W. Tuan,et al.  Inner Electrodes for Multilayer Varistors , 2009 .

[55]  R. Gordon.  Criteria for Choosing Transparent Conductors , 2000 .

[56]  V. Walle,et al.  Hydrogen as a cause of doping in zinc oxide , 2000 .

[57]  K. Kim,et al.  The physical properties of Al-doped zinc oxide films prepared by RF magnetron sputtering , 1997 .