High performance InP-based heterostructure barrier varactors in single and stack configuration

Single (SHBV) and dual (DHBV) heterostructure barrier varactors with AlAs/In/sub 0.52/Al/sub 0.48/As blocking conduction layers have been fabricated and characterised. The devices, whose electrical properties scale with layer complexity exhibit, for a DHBV scheme, leakage currents as low as 10A/cm/sup 2/ at 12 V, a zero bias capacitance of 1 fF//spl mu/m/sup 2/, and a capacitance ratio of 5:1.