Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond

A high-dielectric constant (high-k) TiOx thin layer was fabricated on hydrogen-terminated diamond (H-diamond) surface by low temperature oxidation of a thin titanium layer in ambient air. The metallic titanium layer was deposited by sputter deposition. The dielectric constant of the resultant TiOx was calculated to be around 12. The capacitance density of the metal-oxide-semiconductor (MOS) based on the TiOx/H-diamond was as high as 0.75 µF/cm2 contributed from the high-k value and the very thin thickness of the TiOx layer. The leakage current was lower than 10-13 A at reverse biases and 10-7A at the forward bias of -2 V. The MOS field-effect transistor based on the high-k TiOx/H-diamond was demonstrated. The utilization of the high-k TiOx with a very thin thickness brought forward the features of an ideally low subthreshold swing slope of 65 mV per decade and improved drain current at low gate voltages. The advantages of the utilization high-k dielectric for diamond MOSFETs are anticipated.

[1]  M. Kasu,et al.  Electronic states of NO2-exposed H-terminated diamond/Al2O3 heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy , 2014 .

[2]  R. Waser,et al.  Growth and Crystallization of TiO2 Thin Films by Atomic Layer Deposition Using a Novel Amido Guanidinate Titanium Source and Tetrakis-dimethylamido-titanium , 2013 .

[3]  Jiangwei Liu,et al.  Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors , 2013 .

[4]  R. A. Parker,et al.  Static Dielectric Constant of Rutile (TiO2), 1.6-1060°K , 1961 .

[5]  Jiangwei Liu,et al.  Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric , 2014, Scientific Reports.

[6]  M. Liao,et al.  Light intensity dependence of photocurrent gain in single-crystal diamond detectors , 2010 .

[7]  Masataka Imura,et al.  Demonstration of diamond field effect transistors by AlN/diamond heterostructure , 2011 .

[8]  Hideki Yamamoto,et al.  Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al$_{2}$O$_{3}$ Passivation Layer , 2012 .

[9]  Carlos Frederico de Oliveira Graeff,et al.  Hydrogen-induced transport properties of holes in diamond surface layers , 2001 .

[10]  H. Kawarada,et al.  Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3 , 2011 .

[11]  J. Biskupek,et al.  Analysis of diamond surface channel field-effect transistors with AlN passivation layers , 2013 .

[12]  Kenji Ueda,et al.  Temperature dependent DC and RF performance of diamond MESFET , 2006 .

[13]  J. Laserna,et al.  Study of experimental parameters for improved adsorbate detectability in SERS using etched silver substrates , 2000 .

[14]  C. Eddy,et al.  Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor , 2013 .

[15]  Jiangwei Liu,et al.  Normally-off HfO2-gated diamond field effect transistors , 2013 .

[16]  Jiangwei Liu,et al.  Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices , 2012 .

[17]  D. F. Bowers,et al.  Thin film high dielectric constant metal oxides prepared by reactive sputtering , 2012 .

[18]  Hiroshi Kawarada,et al.  C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation , 2014 .

[19]  M. Stutzmann,et al.  Diamond solution‐gated field effect transistors: Properties and bioelectronic applications , 2012 .

[20]  C. Nebel.  From gemstone to semiconductor , 2003, Nature materials.