An explicit multi-exponential model for semiconductor junctions with series and shunt resistances

An alternative explicit multi-exponential model is proposed to describe multiple, arbitrary ideality factor, conduction mechanisms in semiconductor junctions with parasitic series and shunt resistances. This Lambert function based model allows the terminal current to be expressed as an explicit analytical function of the applied terminal voltage, in contrast to the implicit-type conventional multi-exponential model. As a result this model inherently offers a higher computational efficiency than conventional models, making it better suited for repetitive simulation and parameter extraction applications. Its explicit nature also allows direct analytic differentiation and integration. The model’s applicability has been assessed by parameter extraction and subsequent playback using synthetic and experimental diode forward I–V characteristics.

[1]  Marcello Artioli,et al.  Numerical method for the extraction of photovoltaic module double-diode model parameters through cluster analysis , 2010 .

[2]  M. Saad,et al.  Analysis of multi-crystalline silicon solar cells at low illumination levels using a modified two-diode model , 2010 .

[3]  A. Ortiz-Conde,et al.  Approximate analytical expression for equation of ideal diode with series and shunt resistances , 1992 .

[4]  M. Guziewicz,et al.  Schottky diode parameters extraction using Lambert W function , 2009 .

[5]  H. Matsunami,et al.  New Two-Diode Model for Detailed Analysis of Multicrystalline Silicon Solar Cells , 2005 .

[6]  A. Kapoor,et al.  Exact analytical solutions of the parameters of real solar cells using Lambert W-function , 2004 .

[7]  Z. Chobola,et al.  Diode I-U Curve Fitting with Lambert W Function , 2006, 2006 25th International Conference on Microelectronics.

[8]  A. Ortiz-Conde,et al.  New method to extract the model parameters of solar cells from the explicit analytic solutions of their illuminated I–V characteristics , 2006 .

[9]  Gaston H. Gonnet,et al.  On the LambertW function , 1996, Adv. Comput. Math..

[10]  A. Ortiz-Conde,et al.  Extraction of non-ideal junction model parameters from the explicit analytic solutions of its I–V characteristics , 2005 .

[11]  T. Fuyuki,et al.  Analysis of multicrystalline silicon solar cells by modified 3-diode equivalent circuit model taking leakage current through periphery into consideration , 2007 .

[12]  M. Chegaar,et al.  Solar cells parameters evaluation considering the series and shunt resistance , 2007 .

[13]  T. Fuyuki,et al.  Analysis of the Temperature Characteristics in Polycrystalline Si Solar Cells Using Modified Equivalent Circuit Model , 2003 .

[14]  H. Bayhan,et al.  Study of CdS/Cu(In,Ga)Se2 interface by using n values extracted analytically from experimental data , 2009 .

[15]  Chih-Hang Tung,et al.  Equivalent Circuit Model for the Gate Leakage Current in Broken Down $\hbox{HfO}_{2}/\hbox{TaN/TiN}$ Gate Stacks , 2008, IEEE Electron Device Letters.

[16]  Yu Cao,et al.  A new analytic approximation to general diode equation , 2006 .

[17]  Hei Wong,et al.  A robust parameter extraction method for diode with series resistance , 2001, Proceedings 2001 IEEE Hong Kong Electron Devices Meeting (Cat. No.01TH8553).

[18]  A. Ortiz-Conde,et al.  Exact analytical solutions of the forward non-ideal diode equation with series and shunt parasitic resistances , 2000 .

[19]  A. Sertap Kavasoglu,et al.  Exact Analytical Solution of the Diode Ideality Factor of a pn Junction Device Using Lambert W-function Model , 2007 .

[20]  A. Jayakumar,et al.  Exact analytical solution for current flow through diode with series resistance , 2000 .

[21]  D. Flandre,et al.  Parameter Extraction in Quadratic Exponential Junction Model with Series Resistance using Global Lateral Fitting , 2010 .

[22]  J. W. Meredith,et al.  Microelectronics reliability , 1988, IEEE Region 5 Conference, 1988: 'Spanning the Peaks of Electrotechnology'.