论文信息 - In situ Thermal Atomic Layer Etching for Sub-5 nm InGaAs Multi-gate MOSFETs. - 字舞流文

In situ Thermal Atomic Layer Etching for Sub-5 nm InGaAs Multi-gate MOSFETs.

J. D. del Alamo | S. George | Wenjie Lu | A. Cavanagh | Younghee Lee | J. Gertsch | J. Murdzek | L. Kong