论文信息 - High-efficiency ultra-wideband power amplifier in GaN technology

High-efficiency ultra-wideband power amplifier in GaN technology

The experimental results of an ultra-wideband high-efficiency power amplifier (PA) in GaN technology are presented. The active device is a HEMT with 1 mm of gate periphery. The realised PA operates from 0.8 to 4 GHz, showing a drain efficiency greater than 40% with an output power higher than 32 dBm in the overall bandwidth.

Franco Giannini | Paolo Colantonio | Rocco Giofre | Luca Piazzon

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