Ferroelectric properties enhancement in niobium-substituted Bi3.25La0.75Ti3O12 thin films prepared by chemical solution route

[1]  Baibiao Huang,et al.  Effect of La doping on structural and electrical properties of Bi2Ti2O7thin films , 2004 .

[2]  C. Choy,et al.  Ferroelectric properties of Bi3.25−x/3La0.75Ti3−xNbxO12 films prepared by pulsed laser deposition , 2004 .

[3]  A. Hector,et al.  Synthesis and structural study of stoichiometric Bi2Ti2O7 pyrochlore , 2004 .

[4]  T. Iijima,et al.  Design and ferroelectric properties of polar-axis-oriented polycrystalline Bi4−xPrxTi3O12 thick films on Ir/Si substrates , 2003 .

[5]  H. Ishiwara,et al.  Polarization enhancement and coercive field reduction in W- and Mo-doped Bi3.35La0.75Ti3O12 thin films , 2003 .

[6]  H. Funakubo,et al.  Fabrication of Ion-Cosubstituted Bismuth Titanate Thin Films by Chemical Solution Deposition Method , 2003 .

[7]  H. Funakubo,et al.  Fabrication of M3+-Substituted and M3+/V5+-Cosubstituted Bismuth Titanate Thin Films [M=lanthanoid] by Chemical Solution Deposition Technique , 2002 .

[8]  Z. H. Bao,et al.  Study on ferroelectric and dielectric properties of niobium doped Bi4Ti3O12 ceramics and thin films prepared by PLD method , 2002 .

[9]  W. Lu,et al.  Insulating properties of rapid thermally processed Bi2Ti2O7 thin films by a chemical solution decomposition technique , 2002 .

[10]  H. M. Jang,et al.  Layered perovskites with giant spontaneous polarizations for nonvolatile memories. , 2002, Physical review letters.

[11]  Masaru Miyayama,et al.  Large remanent polarization of Bi4Ti3O12-based thin films modified by the site engineering technique , 2002 .

[12]  D. Hesse,et al.  Anisotropic ferroelectric properties of epitaxially twinned Bi3.25La0.75Ti3O12 thin films grown with three different orientations , 2002 .

[13]  M. Guilloux-Viry,et al.  Evidence of intergrowth in SrBi2Nb2O9 (SBN) thin films grown by PLD on (1 0 0)SrTiO3 in relation with the composition , 2002 .

[14]  Y. Noguchi,et al.  Large remanent polarization of vanadium-doped Bi4Ti3O12 , 2001 .

[15]  Zhuo Wang,et al.  PZT thin films prepared by chemical solution decomposition using a Bi2Ti2O7 buffer layer , 2000 .

[16]  B. S. Kang,et al.  Lanthanum-substituted bismuth titanate for use in non-volatile memories , 1999, Nature.

[17]  M. Okuyama,et al.  Bismuth Titanate Thin Films on Si with Buffer Layers Prepared by Laser Ablation and Their Electrical Properties , 1996 .

[18]  C. Stewart Active ancestral molecules , 1995, Nature.

[19]  G. V. Subba Rao,et al.  Oxide pyrochlores — A review , 1983 .

[20]  L. E. Cross,et al.  Electrical and Optical Properties of Ferroelectric Bi4Ti3O12 Single Crystals , 1968 .

[21]  E. Subbarao,et al.  A family of ferroelectric bismuth compounds , 1962 .