论文信息 - Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors

Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors

The rapid relaxation of the photoresponse of high‐defect‐density amorphous semiconductors such as evaporated a‐Si has been utilized to develop an electronic measurement capability which can generate and sample electronic transients with speeds ≲10 ps.

[1] George David Pettit,et al. Structural, Optical, and Electrical Properties of Amorphous Silicon Films , 1970 .

[2] N. J. Shevchik,et al. Voids in amorphous semiconductors , 1974 .

[3] W. Spear,et al. Photoconductivity and absorption in amorphous Si , 1973 .

[4] D. Auston,et al. An amorphous silicon photodetector for picosecond pulses , 1980 .

[5] D. Auston. Picosecond optoelectronic switching and gating in silicon , 1975 .

[6] J. Bean. Growth of thin silicon films on sapphire and spinel by molecular beam epitaxy , 1980 .

[7] M. Maeda,et al. An Analysis of Gap in Microstrip Transmission Lines , 1972 .