Reduced light sensitivity and persistent photoconductivity in novel modulation doped heterostructures incorporating an n·GaAs/AlGaAs superlatt1ce as the high bandgap material

[1]  H. Morkoc,et al.  On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures , 1984, IEEE Transactions on Electron Devices.

[2]  T. Drummond,et al.  Improved GaAs/AlGaAs single quantum wells through the use of thin superlattice buffers , 1984 .

[3]  P. M. Solomon,et al.  The hemt: A superfast transistor: An experimental GaAs-AlGoAs device switches in picoseconds and generates little heat. This is just what supercomputers need , 1984, IEEE Spectrum.

[4]  T. Baba,et al.  Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al–Ga–As:Si Solid System –a Novel Short Period AlAs/n-GaAs Superlattice– , 1983 .

[5]  M. Shur,et al.  Persistent photoconductivity in (Al,Ga)As/GaAs modulation doped structures: Dependence on structure and growth temperature , 1983 .

[6]  R. Fischer,et al.  Growth of Al0.3Ga0.7As by molecular beam epitaxy in the forbidden temperature range using As2 , 1983 .

[7]  Michael S. Shur,et al.  TEMPERATURE DEPENDENCE OF THE I-V CHARACTERISTICS OF MODULATION-DOPED FETs. , 1983 .

[8]  W. G. Lyons,et al.  Use of a superlattice to enhance the interface properties between two bulk heterolayers , 1983 .

[9]  T. Drummond,et al.  Light sensitivity of Al0.25Ga0.75As/GaAs modulation-doped structures grown by molecular beam epitaxy: effect of substrate temperature , 1983 .

[10]  W. G. Lyons,et al.  Enhancement of electron velocity in modulation-doped (Al,Ga)As/GaAs FETs at cryogenic temperatures , 1982 .

[11]  T. Drummond,et al.  Molecular beam epitaxy growth of (Al, Ga)As/GaAs heterostructures , 1982 .

[12]  D. Lang,et al.  Trapping characteristics and a donor-complex ( DX ) model for the persistent-photoconductivity trapping center in Te-doped Al x Ga 1 − x As , 1979 .

[13]  D. Lang,et al.  Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors , 1977 .

[14]  R. Nelson.  Long‐lifetime photoconductivity effect in n‐type GaAlAs , 1977 .

[15]  T. Drummond,et al.  Improved AlxGa1−xAs bulk lasers with superlattice interfaces , 1984 .