Orientation dependence of morphology of (Hg, Cd)Te films grown by isothermal vapor phase epitaxy

Hg1−xCdxTe (MCT) films were grown by isothermal vapor phase epitaxy at a temperature of 593 ± 1 °C for 24 h on CdTe substrates with different crystalline orientations: (111)Te, (111)Cd, (100) and (110). The film surfaces were observed by optical and scanning electron microscopies, and their compositions were determined using an electron microprobe. The electrical characterization was performed by Hall measurements (resistivity, carrier density and mobility). The crystalline quality of the MCT films was evaluated and the surface morphology was related to the substrate orientation.

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