Changes of optical, dielectric, and structural properties of Si15Sb85 phase change memory thin films under different initializing laser power

[1]  Andrea Bianco,et al.  Effect of Substitution on the Change of Refractive Index in Dithienylethenes: An Ellipsometric Study , 2004 .

[2]  Songlin Feng,et al.  Advantages of SiSb phase-change material and its applications in phase-change memory , 2007 .

[3]  M. El-Nahass,et al.  Structural and optical studies of thermally evaporated CoPc thin films , 2003 .

[4]  Yang Wang,et al.  Crystallization dynamics of as-deposited amorphous AgInSbTe thin film induced by picosecond laser pulses , 2010 .

[5]  Songlin Feng,et al.  Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory , 2008 .

[6]  Dae-Hwan Kang,et al.  Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases , 2005 .

[7]  F. Gan,et al.  Laser induced crystallization of as-deposited amorphous Ge2Sb2Te5 films , 2005 .

[8]  M. Kund,et al.  Nanosecond switching in GeTe phase change memory cells , 2009 .

[9]  Songlin Feng,et al.  Te-Free SiSb Phase Change Material for High Data Retention Phase Change Memory Application , 2007 .

[10]  Fuxi Gan,et al.  Optical parameters and absorption of copper (II)-azo complexes thin films as optical recording media , 2005 .

[11]  Jacques I. Pankove,et al.  Optical Processes in Semiconductors , 1971 .

[12]  J. Tominaga,et al.  Refractive indices change at 633 nm of antimony thin films prepared by heliconwave-plasma sputtering method , 2001 .

[13]  Matthias Wuttig,et al.  Resonant bonding in crystalline phase-change materials. , 2008, Nature materials.

[14]  Ruian Huang,et al.  Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films , 2003 .

[15]  M. Salinga,et al.  A map for phase-change materials. , 2008, Nature materials.

[16]  N. Nobukuni,et al.  Microstructural changes in GeSbTe film during repetitious overwriting in phase‐change optical recording , 1995 .

[17]  M. Lankhorst,et al.  Modelling glass transition temperatures of chalcogenide glasses. Applied to phase-change optical recording materials , 2002 .

[18]  Songlin Feng,et al.  Phase change memory based on Ge2Sb2Te5 capped between polygermanium layers , 2008 .

[19]  S. Ovshinsky Reversible Electrical Switching Phenomena in Disordered Structures , 1968 .

[20]  Yuji Mori,et al.  Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase , 2000 .

[21]  R. Grigorovici,et al.  Optical Properties and Electronic Structure of Amorphous Germanium , 1966, 1966.

[22]  R. Boscaino,et al.  Evidence of delocalized excitons in amorphous solids. , 2010, Physical review letters.

[23]  Yang Wang,et al.  Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences , 2009 .