On the bipolar and unipolar resistive switching characteristics in Ag/SiO2/Pt memory cells

Resistive switching characteristics of Ag/SiO<inf>2</inf>/Pt memory cells with different set current compliance are studied. Ag/SiO<inf>2</inf>/Pt cells with low set current compliances show excellent bipolar switching characteristics after forming, including low operation voltage (<0.5V), low operation current (∼1µA), high resistance ratio (10<sup>4</sup>) and good retention characteristic. Co-existence of bipolar and unipolar resistance switching is observed in Ag/SiO<inf>2</inf>/Pt cells with high set current compliances. The resistive switching mechanisms in Ag/SiO<inf>2</inf>/Pt cells are discussed.

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