论文信息 - An intermediate (1.0 1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy - 字舞流文

An intermediate (1.0 1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy

N. Ledentsov | Z. Alferov | V. Shchukin | D. Bimberg | M. Grundmann | G. Cirlin | G. M. Gur'yanov | A. Golubok | S.Ya. Tipissev