DLTS and drift mobility measurements on MBE-grown nitrogen-doped ZnSe

Abstract We have studied nitrogen-doped ZnSe layers grown on p-GaAs substrates by MBE using deep-level transient spectroscopy and admittance spectroscopy. A hole trap with activation energy E v + 0.11 eV is attributed to a nitrogen acceptor which controls the p-type conduction in the materials. The drift mobility was measured using a time-of-flight technique. Values ranging from 5 to 80 cm 2 /V s were obtained at room temperature, depending on doping level.