An Experimental Evaluation of X-Band GaAs FET Mixers Using Single and Dual-Gate Devices

Experimental results are presented for X-band GaAs FET mixers. Two circuits using commercially available single-gate devices have yielded good conversion gains at 10 GHz, and a specially developed dual-gate device in a simple microwave circuit has yielded 11 dB conversion gain and 6.5 dB noise figure (D.S.B. ), at 10 GHz.