Microlithography: An overview
暂无分享,去创建一个
[1] William J. Dauksher,et al. Stress reduction of gold absorber patterns on x-ray masks , 1992 .
[2] J. M. Zeigler,et al. Soft x-ray resist characterization: studies with a laser plasma x-ray source , 1990, Advanced Lithography.
[3] Henry I. Smith,et al. High-resolution pattern replication using soft X rays , 1972 .
[4] J.C.M. Hwang,et al. Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique , 1985, IEEE Transactions on Electron Devices.
[5] Geoffrey Ingram Taylor,et al. Disintegration of water drops in an electric field , 1964, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[6] M. J. Bowden,et al. A New Family of Positive Electron Beam Resists—Poly(Olefin Sulfones) , 1973 .
[7] F. P. Stratton,et al. Sub‐20‐nm‐wide line fabrication in poly(methylmethacrylate) using a Ga+ microprobe , 1989 .
[8] B. Martin,et al. Improved Bake Latitude Organic Anti-Reflective Coatings for High Resolution Metallisation Lithography , 1989, Advanced Lithography.
[9] Franco Cerrina,et al. Soft x-ray (14 nm) lithography with ultrathin imaging layers and selective electroless metallization , 1993, Advanced Lithography.
[10] Christian Ehrlich,et al. E-Beam Application Of Highly Sensitive Positive And Negative-Tone Resists For X-Ray Mask Making , 1989, Advanced Lithography.
[11] A. Hawryluk,et al. Soft x‐ray projection lithography using an x‐ray reduction camera , 1988 .
[12] Dot lithography for zero‐dimensional quantum wells using focused ion beams , 1988 .
[13] A. F. Evason,et al. Metallurgy and microfabrication applications of gold-silicon-beryllium liquid-metal field-ion sources , 1986 .
[14] Hua‐yu Liu,et al. Characterization of a high‐resolution novolak based negative electron‐beam resist with 4 μC/cm2 sensitivity , 1988 .
[15] M. J. Boyle,et al. What is required for collimated point-source x-ray lithography to achieve an economically viable throughput? , 1993, Advanced Lithography.
[16] Koichi Toyoda,et al. Lithographic approach for 100 nm fabrication by focused ion beam , 1986 .
[18] C. A. Lee,et al. 400‐Å high aspect‐ratio lines produced in poylmethyl methacrylate (PMMA) by ion‐beam exposure , 1979 .
[19] D. Jefferies,et al. Miniature ion sources for analytical instruments , 1978 .
[20] L. P. Muray,et al. Arrayed miniature electron beam columns for high throughput sub-100 nm lithography , 1992 .
[21] J. R. Maldonado,et al. Prospects for x-ray lithography , 1992 .
[22] Mohamed Chaker,et al. Laser plasma sources for proximity printing or projection x‐ray lithography , 1992 .
[23] P. Prewett. Focused ion beam systems for materials analysis and modification , 1984 .
[24] J. W. Stafford,et al. EBES: A practical electron lithographic system , 1975, IEEE Transactions on Electron Devices.
[25] David L. Windt,et al. Reflective mask technologies and imaging results in soft x‐ray projection lithography , 1991 .
[26] A. Wagner,et al. Ion beam exposure characteristics of resists , 1979 .
[27] Fumio Murai,et al. Electron‐beam cell‐projection lithography system , 1992 .
[28] Weng W. Chow,et al. Resist performance in soft x-ray projection lithography , 1993, Advanced Lithography.
[29] L. Swanson. Liquid metal ion sources: Mechanism and applications , 1983 .
[30] Darryl Peters,et al. EBES4: performance of a new e-beam reticle generator , 1993, Advanced Lithography.
[31] K. Kurihara,et al. Soft x‐ray reduction lithography using multilayer mirrors , 1989 .