Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

Emerging nonvolatile memories (eNVMs) such as phase-change random access memories (PCRAMs) or oxide-based resistive random access memories (OxRRAMs) are promising candidates to replace Flash and Static Random Access Memories in many applications. This paper introduces a novel set of building blocks for field-programmable gate arrays (FPGAs) using eNVMs. We propose an eNVM-based configuration point, a look-up table structure with reduced programming complexity and a high-performance switchbox arrangement. We show that these blocks yield an improvement in area and write time of up to 3× and 33×, respectively, versus a regular Flash implementation. By integrating the designed blocks in an FPGA, we demonstrate an area and delay reduction of up to 28% and 34%, respectively, on a set of benchmark circuits. These reductions are due to the eNVM 3-D integration and to their low on-resistance state value. Finally, we survey many flavors of the technologies and we show that the best results in terms of area and delay are obtained with Pt/TiO2/Pt stack, while the lowest leakage power is achieved by InGeTe stack.

[1]  A. Toffoli,et al.  Electrical Behavior of Phase-Change Memory Cells Based on GeTe , 2010, IEEE Electron Device Letters.

[2]  K. Gopalakrishnan,et al.  Phase change memory technology , 2010, 1001.1164.

[3]  Jason Luu,et al.  Architecture description and packing for logic blocks with hierarchy, modes and complex interconnect , 2011, FPGA '11.

[4]  Jean-Luc Battaglia,et al.  Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells† , 2009 .

[5]  Lionel Torres,et al.  Non-volatile run-time field-programmable gate arrays structures using thermally assisted switching magnetic random access memories , 2010, IET Comput. Digit. Tech..

[6]  C. Cagli,et al.  Experimental and theoretical study of electrode effects in HfO2 based RRAM , 2011, 2011 International Electron Devices Meeting.

[7]  Elias Ahmed,et al.  THE EFFECT OF LOGIC BLOCK GRANULARITY ON DEEP-SUBMICRON FPGA PERFORMANCE AND DENSITY , 2001 .

[8]  A. Kotabe,et al.  Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention , 2007, 2007 IEEE International Electron Devices Meeting.

[9]  K. S. Choi,et al.  Highly productive PCRAM technology platform and full chip operation: Based on 4F2 (84nm pitch) cell scheme for 1 Gb and beyond , 2011, 2011 International Electron Devices Meeting.

[10]  H. Wong,et al.  An Integrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory , 2007, 2007 IEEE Symposium on VLSI Technology.

[11]  Abbas El Gamal,et al.  Nonvolatile 3D-FPGA with monolithically stacked RRAM-based configuration memory , 2012, 2012 IEEE International Solid-State Circuits Conference.

[12]  B. Cronquist,et al.  A Novel Flash-based FPGA Technology with Deep Trench Isolation , 2007, 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop.

[13]  Fabien Clermidy,et al.  Emerging memory technologies for reconfigurable routing in FPGA architecture , 2010, 2010 17th IEEE International Conference on Electronics, Circuits and Systems.

[14]  Fabien Clermidy,et al.  Phase-change-memory-based storage elements for configurable logic , 2010, 2010 International Conference on Field-Programmable Technology.

[15]  G. Reimbold,et al.  Carbon-doped GeTe: A promising material for Phase-Change Memories , 2011 .

[16]  Kinam Kim,et al.  Highly manufacturable high density phase change memory of 64Mb and beyond , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[17]  S. Lee,et al.  A novel cell technology using N-doped GeSbTe films for phase change RAM , 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

[18]  Steven J. E. Wilton,et al.  Architectures and algorithms for field-programmable gate arrays with embedded memory , 1997 .

[19]  Yang Liu,et al.  Charging-Induced Changes in Reverse Current–Voltage Characteristics of Al/Al-Rich $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{p-Si}$ Diodes , 2009, IEEE Transactions on Electron Devices.

[20]  M. Pickett,et al.  A memristor-based nonvolatile latch circuit , 2010, Nanotechnology.

[21]  Jang‐Sik Lee,et al.  Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices , 2008 .

[22]  Vaughn Betz,et al.  Architecture and CAD for Deep-Submicron FPGAS , 1999, The Springer International Series in Engineering and Computer Science.

[23]  Wei Wang,et al.  FPGA Based on Integration of CMOS and RRAM , 2011, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[24]  Shuu'ichirou Yamamoto,et al.  Nonvolatile Delay Flip-Flop Based on Spin-Transistor Architecture and Its Power-Gating Applications , 2010 .

[25]  Wei Zhu,et al.  Charging-Induced Changes in Reverse Current – Voltage Characteristics of Al / Al-Rich Al 2 O 3 / pSi Diodes , 2009 .

[26]  C. Muller,et al.  Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories , 2011 .

[27]  Carl Schell,et al.  Nanocomposite Phase-Change Memory Alloys for Very High Temperature Data Retention , 2010, IEEE Electron Device Letters.

[28]  Kailash Gopalakrishnan,et al.  Overview of candidate device technologies for storage-class memory , 2008, IBM J. Res. Dev..

[29]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[30]  Mingjie Lin,et al.  Performance Benefits of Monolithically Stacked 3-D FPGA , 2007, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[31]  Jason Cong,et al.  mrFPGA: A novel FPGA architecture with memristor-based reconfiguration , 2011, 2011 IEEE/ACM International Symposium on Nanoscale Architectures.

[32]  G. Micheli,et al.  Resistive Programmable Through-Silicon Vias for Reconfigurable 3-D Fabrics , 2012, IEEE Transactions on Nanotechnology.

[33]  G. Reimbold,et al.  N-doped GeTe as performance booster for embedded Phase-Change Memories , 2010, 2010 International Electron Devices Meeting.

[34]  G. Servalli,et al.  A 45nm generation Phase Change Memory technology , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).