InP HBT Integrated Circuit Technology for Terahertz Frequencies

We report on the development of an InP DHBT integrated circuit technology for applications at the lower range of the THz frequency band (0.3-3 THz) 0.25um HBTs demonstrate an extrapolated fmax of >800GHz while maintaining a common-emitter breakdown voltage of >4V. The transistors have been integrated a full IC process that includes three-levels of interconnects, backside wafer thinning to 50um with a through-wafer via process, and a backside etch singulation process that allows for the formation of free standing integrated waveguide probes. The technology has been utilized to demonstrate amplifiers, oscillators and dynamic frequency dividers all operating at >300GHz.

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