Structure and Multiferroic Properties of V-doped Bi6Fe2Ti3O18 Thin Films Prepared by Chemical Solution Deposition

Pure Bi6Fe2Ti3O18 and vanadium (V) doped Bi6Fe2Ti3O18 (Bi5.99Fe2Ti2.75V0.03O18) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a chemical solution deposition method. The Bi5.99Fe2Ti2.75V0.03O18 thin film exhibited improved electrical and multiferroic properties, such as leakage current densities, dielectric properties, ferroelectric and ferromagnetic properties. We consider that the improved properties might be related to the reduced concentration of oxygen vacancies and the decreased mobility of oxygen vacancies by V doping.

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