论文信息 - Radiation response of advanced commercial SRAMs

Radiation response of advanced commercial SRAMs

Total-dose tests have been performed on an advanced commercial 4-Mb static RAM (SRAM) that uses thin film p-channel transistors in a six-transistor (6-T) cell design in 0.35-/spl mu/m technology. These results are compared with other results obtained on similar test structures and also with other results on commercial SRAMs using the more typical four-transistor, two-resistor (4-T) design.

Aivars J. Lelis | M. Manning | T. R. Oldham | D. N. Robertson | S. R. Murrill

[1] Sherra E. Diehl-Nagle. A New Class of Single Event Soft Errors , 1984, IEEE Transactions on Nuclear Science.

[2] Kenji Maeguchi,et al. A 4-Mb CMOS SRAM with a PMOS thin-film-transistor load cell , 1990 .

[3] Noriyuki Suzuki,et al. A 150 ns 16-Mb CMOS SRAM with interdigitated bit-line architecture , 1992 .

[4] P. Garnier,et al. Total dose failures in advanced electronics from single ions , 1993 .

[5] Robert Ecoffet,et al. Heavy ion induced single hard errors on submicronic memories (for space application) , 1992 .

[6] H. Goto,et al. A 3.3-V 12-ns 16-Mb CMOS SRAM , 1992 .

[7] C. Poivey,et al. Characterization of single hard errors (SHE) in 1 M-bit SRAMs from single ion , 1994 .