Temperature Dependence of Molecular Beam Epitaxial Growth Rates for InxGa1-xAs and InxAl1-xAs

The temperature dependence of the growth and evaporation rates in GaAs, InxGa1-xAs and InxAl1-xAs grown by molecular-beam epitaxy (MBE) was measured by reflection high-energy electron-diffraction (RHEED) oscillations. The growth rate and the evaporation rate of GaAs were fitted using a thermodynamical approach. For ternary alloys the calculated results were in agreement with the observed growth rates.