Silicon‐on‐insulator MOSFETs models in analog/RF domain

Several physical phenomena specific to silicon-on-insulator metal-oxide-semiconductor field-effect transistors, such as floating body effects, self-heating, and substrate coupling, are described and modeled. Small-signal equivalent circuit of ultra-thin body and thin buried oxide and fin field effect transistor FinFET are extracted, and their radio frequency figures of merit as well as their advantages and limitations are presented. We demonstrate the importance of performing wideband characterization at the early stage of the technology development in order to identify the device weaknesses and come up with technological solutions to overcome those. With the ongoing downscaling of the metal-oxide-semiconductor devices, the surrounding of the transistor, that is, the contacts, the access lines, and the substrate, starts to play a major role on the transistor behavior. There is an urgent need to develop adequate models for the new generation of devices valid over a wide frequency band. © 2013 The Authors. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS Published by John Wiley & Sons, Ltd.

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