Demonstration of Efficient Semipolar 410 nm Violet Laser Diodes Heteroepitaxially Grown on High-Quality Low-Cost GaN/Sapphire Substrates

Heteroepitaxial growth of semipolar laser diodes (LDs) on foreign substrates is extremely challenging but crucial to reduce the cost of semipolar bulk GaN substrates. In this work, we demonstrate t...

[1]  M. S. Islim,et al.  Advanced LiFi technology: Laser light , 2020, OPTO.

[2]  Sergio Pinna,et al.  Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication , 2020 .

[3]  S. Denbaars,et al.  Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates. , 2019, ACS applied materials & interfaces.

[4]  Z. Deng,et al.  Elimination of Stacking Faults in Semipolar GaN and Light-Emitting Diodes Grown on Sapphire. , 2019, ACS applied materials & interfaces.

[5]  Shuji Nakamura,et al.  Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating. , 2019, Optics letters.

[6]  Shuji Nakamura,et al.  Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region , 2019, Japanese Journal of Applied Physics.

[7]  George T. Wang,et al.  Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes , 2018 .

[8]  Shuji Nakamura,et al.  Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers. , 2018, Optics express.

[9]  Shuji Nakamura,et al.  Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates. , 2017, ACS applied materials & interfaces.

[10]  S. Denbaars,et al.  444 nm InGaN light emitting diodes on low-defect-density GaN templates on patterned sapphire , 2017 .

[11]  James S. Speck,et al.  Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202¯1¯) III-nitride laser diodes with chemically assisted ion beam etched facets , 2016 .

[12]  S. Denbaars,et al.  High luminous flux from single crystal phosphor-converted laser-based white lighting system. , 2016, Optics express.

[13]  S. Denbaars,et al.  4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. , 2015, Optics express.

[14]  Kanglin Xiong,et al.  Semipolar (20 2¯1) GaN and InGaN quantum wells on sapphire substrates , 2014 .

[15]  Jeffrey Y. Tsao,et al.  Comparison between blue lasers and light‐emitting diodes for future solid‐state lighting , 2013 .

[16]  S. Denbaars,et al.  Group III-nitride lasers: a materials perspective , 2011 .

[17]  Wolfgang G. Scheibenzuber,et al.  Recombination coefficients of GaN-based laser diodes , 2011 .

[18]  A. Tyagi,et al.  Critical Thickness for Onset of Plastic Relaxation in (1122) and (2021) Semipolar AlGaN Heterostructures , 2010 .

[19]  J. Piprek.  Efficiency droop in nitride‐based light‐emitting diodes , 2010 .

[20]  Takashi Miyoshi,et al.  InGaN‐based 518 and 488 nm laser diodes on c‐plane GaN substrate , 2010 .

[21]  A. David,et al.  Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis , 2010 .

[22]  R. Dupuis,et al.  Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[23]  J. Speck,et al.  Nonpolar and Semipolar Group III Nitride-Based Materials , 2009 .

[24]  Anurag Tyagi,et al.  Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates , 2007 .

[25]  Mathew C. Schmidt,et al.  Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes , 2007 .

[26]  Peter Blood,et al.  Characterization of semiconductor laser gain media by the segmented contact method , 2003 .

[27]  S. Denbaars,et al.  Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN , 2002 .

[28]  M. Reiche,et al.  Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes , 2000, Nature.

[29]  Nakamura,et al.  The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes , 1998, Science.

[30]  Masahiko Sano,et al.  High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates , 1998 .