A design technique to reduce hot carrier effect

In order to reduce the hot carrier (HC) effect, some specific design techniques need to be developed and applied to the circuit design. In this paper, HC induced MOSFET parameter degradations are investigated experimentally, and different low noise amplifier (LNA) architectures are evaluated in terms of HC induced performance degradations. A generalized design technique is proposed to reduce HC effect on circuits.

[1]  Enjun Xiao,et al.  Hot carrier and soft breakdown effects on VCO perfomance , 2002, 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280).

[2]  M. J. Deen,et al.  Effects of hot-carrier stress on the RF performance of 0.18 /spl mu/m technology NMOSFETs and circuits , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

[3]  Yi Liu,et al.  Effect of gate-oxide breakdown on RF performance , 2003 .