论文信息 - Calculation of lattice heating in SiC RF power devices

Calculation of lattice heating in SiC RF power devices

Silicon carbide MESFET devices are suitable for high-speed and high-power applications. In this paper we are studying thermal effects in 4H-SiC RF power devices. The simulations are based on a comb ...

Hans-Erik Nilsson | Kent Bertilsson | Christopher Harris

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