E-PROOFS: A CMOS bridging fault simulator

The problem of bridging fault simulation under the conventional voltage testing environment is considered. A method to provide electrical-level simulation accuracy, without paying the associated performance penalties, is proposed. A three-level simulation model is used, balancing the tradeoffs among gate-level, switch-level, and electrical-level simulation. Large memory overheads are avoided by localizing the fault, and by performing electrical-level simulation only in the area around the fault. This approach is sufficiently flexible to model feedback faults, BiCMOS circuits, stuck-open faults, and any fault that can be described with a circuit netlist. Tests were run on several ISCAS combinational and sequential benchmark circuits, using realistic cells and transistor parameters; results show that accurate simulations can be performed in reasonable time.<<ETX>>

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