Study of vertical coupled-cavity laser structures
暂无分享,去创建一个
[1] V. Badilita,et al. Rate-equation model for coupled-cavity surface-emitting lasers , 2004, IEEE Journal of Quantum Electronics.
[2] L. Coldren,et al. Chapter 1 – OPTICAL GAIN IN III–V BULK AND QUANTUM WELL SEMICONDUCTORS , 1993 .
[3] Diana L. Huffaker,et al. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots , 1998 .
[4] K. Iga,et al. GaInAsP/InP Surface Emitting Injection Lasers , 1979 .
[5] Kent D. Choquette,et al. High-frequency modulation of oxide- confined vertical cavity surface emitting lasers , 1996 .
[6] Vlad Badilita,et al. Dielectric membranes manufactured by isotropic etching of <111> oriented silicon for microwave applications , 1998, 1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351).
[7] Marc Ilegems,et al. The dual wavelength Bi-vertical cavity surface-emitting laser , 1999 .
[8] R. Michalzik,et al. Operating Principles of VCSELs , 2003 .
[9] A. Christou,et al. Vertical cavity surface emitting laser with AlGaInAs/InP Bragg mirrors fabricated for operation at 1.55 /spl mu/m , 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).
[10] E. Derouin,et al. 1-mW CW-RT monolithic VCSEL at 1.55 μm , 1999, IEEE Photonics Technology Letters.
[11] L. Coldren,et al. InGaAs vertical-cavity surface-emitting lasers , 1991 .
[12] Fumio Koyama. Room temperature cw operation of GaAs vertical cavity surface emitting laser , 1988 .
[13] R. Raj,et al. Monolithic vertical cavity device lasing at 1.55 /spl mu/m in InGaAlAs system , 1997 .
[14] Henning Riechert,et al. 1.29 /spl mu/m GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance , 1999 .
[15] Kent D. Choquette,et al. Bistable output from a coupled-resonator vertical-cavity laser diode , 2000 .
[16] J. Danckaert,et al. Polarization stabilization in vertical-cavity surface-emitting lasers through asymmetric current injection , 2000, IEEE Photonics Technology Letters.
[17] K. Geib,et al. Low threshold voltage vertical-cavity lasers fabricated by selective oxidation , 1994 .
[18] F. Koyama,et al. Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laser , 1989 .
[19] Peter Michler,et al. Dynamics Of Dual-wavelength Emission From A Coupled Semiconductor Microcavity Laser , 1997, QELS '97., Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference.
[20] M. Kondow,et al. Photopumped lasing at 1.25 μm of GaInNAs-GaAs multiple-quantum-well vertical-cavity surface-emitting lasers , 1997, IEEE Photonics Technology Letters.
[21] Wood,et al. Electric field dependence of optical absorption near the band gap of quantum-well structures. , 1985, Physical review. B, Condensed matter.
[22] H. Deng,et al. 1.15-μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser , 1998, IEEE Photonics Technology Letters.
[23] Marc Ilegems,et al. Coupled semiconductor microcavities , 1994 .
[24] L. Coldren,et al. Diode Lasers and Photonic Integrated Circuits , 1995 .
[25] Larry A. Coldren,et al. 1.55-/spl mu/m InP-lattice-matched VCSELs with AlGaAsSb-AlAsSb DBRs , 2001 .
[26] Y.H. Lo,et al. Low-threshold proton-implanted 1.3-μm vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors , 1997, IEEE Photonics Technology Letters.
[27] J. D. Kingsley,et al. Coherent Light Emission From GaAs Junctions , 1962 .
[28] F. Koyama,et al. A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers , 1997, IEEE Photonics Technology Letters.
[29] Vlad Badilita,et al. Light-current characterization of dual-wavelength VCSELs , 2002, SPIE OPTO.
[30] D. Ahn,et al. Enhancement of the Stark effect in coupled quantum wells for optical switching devices , 1989 .
[31] Guy Verschaffelt,et al. Polarization switching and modulation dynamics in gain- and index-guided VCSELs , 2000, Photonics West - Optoelectronic Materials and Devices.
[32] G. Gonnet,et al. On Lambert's W Function , 1993 .
[33] J. A. Lott,et al. Visible (639 nm /spl ngt/ /spl lambda/ /spl ngt/ 661 nm) vertical cavity surface emitting laser diodes , 1993, 51st Annual Device Research Conference.
[34] C. Burrus,et al. The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation , 1985 .
[35] Gunther Steinle,et al. Development of InGaAsN-based 1.3 μm VCSELs , 2002 .
[36] A. J. Moseley,et al. High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulators , 1989 .
[37] Brian Thibeault,et al. Integrable InGaAs/GaAs vertical-cavity surface-emitting lasers , 1993 .
[38] Larry A. Coldren,et al. Submilliamp threshold vertical‐cavity laser diodes , 1990 .
[39] D. Deppe,et al. Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers , 1994 .
[40] M. Brunner,et al. Continuous-wave dual-wavelength lasing in a two-section vertical-cavity laser , 2000, IEEE Photonics Technology Letters.
[41] Shun Lien Chuang,et al. Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field , 1987 .
[42] J. Reed,et al. Pulsed electrical operation of 1.5-μm vertical-cavity surface-emitting lasers , 1995, IEEE Photonics Technology Letters.
[43] Rainer Michalzik,et al. Current-spreading-induced bistability in bipolar cascade vertical-cavity surface-emitting lasers , 2002 .
[44] Kent D. Choquette,et al. Q-switched operation of a coupled-resonator vertical-cavity laser diode , 2000 .
[45] C. Weisbuch,et al. Dual-wavelength laser emission from a coupled semiconductor microcavity , 1997 .
[46] Ming C. Wu,et al. 10.1 nm range continuous wavelength-tunable vertical-cavity surface-emitting lasers , 1994 .
[47] K.J. Malloy,et al. Efficient room-temperature continuous-wave AlGaInP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes , 1994, IEEE Photonics Technology Letters.
[48] Henning Riechert,et al. Determination of band offsets in semiconductor quantum well structures using surface photovoltage , 2003 .
[49] Kent D. Choquette,et al. Threshold and modal characteristics of composite-resonator vertical-cavity lasers , 2003 .
[50] Henning Riechert,et al. Monolithic VCSEL with InGaAsN active region emitting at 1.28 µm and CW output power exceeding 500 µW at room temperature , 2001 .
[51] D. Miller,et al. Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures , 1984 .
[52] G. Verschaffelt,et al. Control of polarization switching in vertical coupled-cavities surface emitting lasers , 2004, IEEE Photonics Technology Letters.
[53] K. Choquette,et al. Control of vertical-cavity laser polarization with anisotropic transverse cavity geometries , 1994, IEEE Photonics Technology Letters.
[54] Markus Ortsiefer,et al. Vertical-cavity surface-emitting laser diodes at 1.55 /spl mu/m with large output power and high operation temperature , 2001 .
[55] Kenichi Iga,et al. Room‐temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser , 1984 .
[56] Kent D. Choquette,et al. Coupled resonator vertical-cavity laser diode , 1999 .
[57] Giancarlo Bartolucci,et al. Polyimide based GaAs micromachined millimeter wave structures , 2000 .
[58] Larry A. Coldren,et al. Vertical-Cavity Surface-Emitting Lasers , 2001 .
[59] Eric Daniel Jones,et al. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs , 1999 .
[60] Hugo Thienpont,et al. Quantum confined Stark effect in coupled-cavity VCSELs , 2004, SPIE Photonics Europe.
[61] Kent D. Choquette,et al. Polarization switching in composite resonator vertical cavity lasers , 2003, Conference on Lasers and Electro-Optics, 2003. CLEO '03..
[62] Kent D. Choquette,et al. High single-mode power observed from a coupled-resonator vertical-cavity laser diode , 2001 .
[63] Rainer Michalzik,et al. Data transmission up to 10 Gbit/s with 1.3 /spl mu/m wavelength InGaAsN VCSELs , 2001 .
[64] D.A. Buell,et al. InP-based all-epitaxial 1.3-μm VCSELs with selectively etched AlInAs apertures and Sb-based DBRs , 2003, IEEE Photonics Technology Letters.
[65] Giacomelli,et al. Stochastic resonance in vertical cavity surface emitting lasers , 2000, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.
[66] M Ilegems,et al. Multilayer GaAs-Al(0.3)Ga(0.7)As dielectric quarter wave stacks grown by molecular beam epitaxy. , 1975, Applied optics.
[67] W. Kowalsky,et al. Monolithically integrated InGaAlAs dielectric reflectors for vertical cavity optoelectronic devices , 1991 .
[68] Connie J. Chang-Hasnain,et al. Polarization control of vertical-cavity surface-emitting lasers by electro-optic birefringence , 2000 .
[69] Yong-Hee Lee,et al. Strong polarization selectivity in 780-nm vertical-cavity surface-emitting lasers grown on misoriented substrates , 1997 .
[70] L. Esaki,et al. Variational calculations on a quantum well in an electric field , 1983 .
[71] A. R. Kovsh,et al. Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm , 1999 .