Carrier Lifetime vs. Ion-Implantation Dose in Silicon on Sapphire

We have measured the dependence of the free‐carrier lifetime on O+ ion‐implantation dose in silicon‐on‐sapphire. At low implant doses, the carrier trapping rate increased linearly with the trap density introduced by ion implantation. At doses above 3×1014 cm−2 the measured carrier lifetime reached a limit of 600 fs.

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