Sulfurization Growth of SnS Films and Fabrication of CdS/SnS Heterojunction for Solar Cells

Polycrystalline tin sulfide (SnS) films were grown by sulfurization of a Sn precursor at low temperatures of 120–220 °C. The SnS film grown at 170 °C comprises densely packed 3–5-µm-diameter columnar grains, which is appropriate for use in the photoabsorption layers of solar cells. The SnS film had an optical bandgap of approximately 1.3 eV and p-type conductivity. Using an appropriate SnS film, an n-CdS/p-SnS heterojunction was fabricated on Mo-coated soda-lime glass substrates. These results are the first step toward realizing an optical device as a solar cell using a SnS film grown by sulfurization.

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