Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices
暂无分享,去创建一个
Xing Wu | Nagarajan Raghavan | Michel Bosman | Kin Leong Pey | Sen Mei | Xing Wu | K. Pey | N. Raghavan | M. Bosman | S. Mei
[1] C.L. Ghosh,et al. GaAs MESFET's with Ga1-xAlxAs buffer layers , 1984, IEEE Electron Device Letters.
[2] J. E. E. Baglin,et al. Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds , 1984 .
[3] M.-A. Nicolet,et al. Utilization of NiSi2as an interconnect material for VLSI , 1984, IEEE Electron Device Letters.
[4] Shirshak K. Dhali,et al. Plasma oxidation of SO2 , 1990 .
[5] A. Lodder,et al. Electromigration in transition metals. II. Light interstitials in Cu, Ag, Ni, Pd, Al, V, Nb and Ta , 1991 .
[6] B. Svensson,et al. Nickel atomic diffusion in amorphous silicon , 1995 .
[7] Klaus Bohmhammel,et al. Optimization of thermodynamic data of the Ni–Si system , 1999 .
[8] Karen Maex,et al. In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines , 2001 .
[9] C. Gerber,et al. Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals , 2001 .
[10] Andrew G. Glen,et al. APPL , 2001 .
[11] Masako Yudasaka,et al. Structure of single-wall carbon nanotubes purified and cut using polymer , 2002 .
[12] G. Dewey,et al. High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications , 2008, 2008 IEEE International Electron Devices Meeting.
[13] André Vantomme,et al. On the thermal expansion coefficient of CoSi2 and NiSi2 , 2009 .
[14] Jae Hyuck Jang,et al. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. , 2010, Nature nanotechnology.
[15] Nagarajan Raghavan,et al. Resistive switching in NiSi gate metal-oxide-semiconductor transistors , 2010 .
[16] Wen-Wei Wu,et al. Heterogeneous and Homogeneous Nucleation of Epitaxial NiSi2 in [110] Si Nanowires , 2011 .
[17] T. Kauerauf,et al. Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled Regime , 2011, IEEE Electron Device Letters.
[18] James M. Tour,et al. In situ imaging of the conducting filament in a silicon oxide resistive switch , 2012, Scientific reports.
[19] Shimeng Yu,et al. Metal–Oxide RRAM , 2012, Proceedings of the IEEE.
[20] L. Larcher,et al. Leakage Current-Forming Voltage Relation and Oxygen Gettering in HfOx RRAM Devices , 2013, IEEE Electron Device Letters.
[21] Kinam Kim,et al. In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure , 2013, Nature Communications.
[22] D. Ielmini,et al. Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM , 2013, IEEE Electron Device Letters.
[23] S. Koswatta,et al. GIDL in Doped and Undoped FinFET Devices for Low-Leakage Applications , 2013, IEEE Electron Device Letters.
[24] Lih-Juann Chen,et al. Dynamic evolution of conducting nanofilament in resistive switching memories. , 2013, Nano letters.
[25] L. Gu,et al. In situ TEM Observation of Resistance Switching in Titanate Based Device , 2014, Scientific Reports.
[26] Xing Wu,et al. Evolution of Filament Formation in Ni/HfO2/SiOx/Si‐Based RRAM Devices , 2015 .