Design of an E-band high power amplifier for wireless high data rate communications

In this paper, a fully integrated E-band power amplifier with 17 dB gain, 11.5 dBm saturated output power, and 5 GHz bandwidth was achieved in the 90 nm CMOS technology. The amplifier configuration consists of two cascode stages and a common-source output stage. It exhibits a peak power added-efficiency of 20 % while consuming 50 mW from a 1.5 V power supply.

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