论文信息 - Enhanced electron spin polarization in photoemission from thin GaAs

Enhanced electron spin polarization in photoemission from thin GaAs

The polarization of photoemitted electrons from thin GaAs layers grown by molecular beam epitaxy has been measured. Polarization as high as 49% was observed for a 0.2‐μm‐thick GaAs sample at excitation photon wavelengths longer than 750 nm. The maximum polarization is dependent on the thickness of the GaAs layer, decreasing to about 41% for a 0.9‐μm‐thick GaAs sample.

[1] C. Wood,et al. Antimony passivation of molecular-beam epitaxially grown GaAs surfaces , 1988 .

[2] Drouhin,et al. Photoemission from activated gallium arsenide. I. Very-high-resolution energy distribution curves. , 1985, Physical review. B, Condensed matter.

[3] S. Valeri,et al. Spin polarized photoemission from molecular beam epitaxy-grown be-doped GaAs , 1981 .

[4] K.,et al. Further measurements of parity non-conservation in inelastic electron scattering. [16. 2 to 22. 2 GeV] , 1979 .

[5] D. Pierce,et al. Direct observation of spin dependent electronic structure of GaAs using spin polarized photoemission , 1975 .