论文信息 - High current operation of GaN power HEMT

High current operation of GaN power HEMT

We report high current operation of GaN power HEMTs fabricated on a sapphire substrate by metalorganic chemical vapor deposition (MOCVD). In order to decrease an electrical resistance of the wiring to take out a high current, the thickness of Al plating was 3 Pm. In addition, in order to decrease a thermal resistance, the substrate was ground to 150 Pm. The drain current was over 30 A and the specific on-resistance was 14.5 m: -cm 2 under pulse measurement with the gate width of 157 mm. A high temperature operation over 300 °C was also verified.

[1] Y. Okamoto,et al. 10-W/mm AlGaN-GaN HFET with a field modulating plate , 2003, IEEE Electron Device Letters.

[2] U.K. Mishra,et al. Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[3] I. Omura,et al. 600V AlGaN/GaN power-HEMT: design, fabrication and demonstration on high voltage DC-DC converter , 2003, IEEE International Electron Devices Meeting 2003.

[4] S. Yoshida,et al. High-power AlGaN/GaN HFET with a lower on-state resistance and a higher switching time for an inverter circuit , 2003, ISPSD 2003.