Numerical simulation of cool MOS transistor

Although the new CoolMOS concept for high-voltage MOSFET is based on the conventional MOSFET principle, it is not a gradual enhancement or further optimization of the conventional power MOSFET, but a ground-breaking innovation in the MOS-controlled power transistor technology field. Due to its low on-resistance accompanying the high blocking voltage, the previously known technology limits for the standard MOSFET have been far exceeded. This opens the way to new fields of application.

[1]  J. Tihanyi,et al.  A new generation of high voltage MOSFETs breaks the limit line of silicon , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[2]  G. Deboy,et al.  COOLMOS/sup TM/-a new milestone in high voltage power MOS , 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).