The role of silicon, silicon carbide and gallium nitride in power electronics
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G. Deboy | G. Curatola | O. Haberlen | M. Treu | E. Vecino | M. Pippan | M. Kutschak | U. Kirchner
[1] H. Ohashi. Power devices now and future, strategy of Japan , 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.