Structural and electrical characteristics of thin films of prepared by atmospheric-pressure metal-organic chemical vapour deposition

thin films have been prepared firstly by an atmospheric-pressure metal-organic chemical vapour deposition technique. Smooth and polycrystalline films with uniform composition were deposited onto silicon substrates at a substrate temperature of for 1 h and the fully (001)-textured films were obtained with a rapid thermal annealing process thereafter at a temperature of for 60 s. The prepared films exhibited good structural, dielectric and ferroelectric properties. The measured dielectric constant and dissipation factor at a frequency of 100 kHz were 107 and 0.066, respectively, for a thick film annealed at for 60 s. The frequency dependences of the dielectric constant and the dissipation factor were also investigated. The ferroelectricity of the films was confirmed by recording P-E hysteresis loops with remnant polarization and coercive field values of and , respectively. The Curie temperature of the films was found to be 378 K. The influence of stress on the physical properties of the films was investigated.

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