论文信息 - Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons

Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons

Near-ideal abrupt heterojunction InP-GaAsSb-InP double heterojunction bipolar transistors (DHBTs) have been implemented. The GaAsSb conduction band edge is measured to be 0.18 eV higher than the InP conduction band edge. Resulting in a ballistic electron launcher collector that is free of the blocking effect normally associated with GaInAs DHBTs. The collector and base current ideality factors were 1.00 and 1.05, respectively. Also a very low collector offset voltage V/sub CE,OFF/=14 mV was measured for 5/spl times/12 /spl mu/m/sup 2/ self-aligned DHBTs.

[1] Mau-Chung Frank Chang,et al. Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors , 1996 .

[2] S. Tiwari. A new effect at high currents in heterostructure bipolar transistors , 1988, IEEE Electron Device Letters.

[3] Rajaram Bhat,et al. InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition , 1996 .