Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers

A1 Crystal structure A1. Defects A1. Stresses A3. Metalorganic vapor phase epitaxy B1. Nitrides B3. Light emitting diodes abstract We report the growth of high crystalline quality GaN-based light emitting diodes (LEDs) on Si (111) substrates with AlN/GaN superlattice interlayer for both stress and dislocation engineering. A focused study involved comparison of different interlayer structures including low-temperature AlN, medium- temperature AlN multilayers and AlN/GaN supperlattice for optimization of the LED performance. The results show that the AlN/GaN supperlattice interlayer is the most effective in reducing the residual tensile stress and improving the crystalline quality of GaN on Si. With the AlN/GaN superlattice interlayer, optical properties of the LEDs were enhanced and optical output power of unpackaged LED chips on Si substrates was improved by 24%.

[1]  Jinmin Li,et al.  The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD , 2008 .

[2]  Wenqin Peng,et al.  Design of the low-temperature AlN interlayer for GaN grown on Si (111) substrate , 2005 .

[3]  Gwo-mei Wu,et al.  Investigation of GaN crystal quality on silicon substrates using GaN/AlN superlattice structures , 2007 .

[4]  Armin Dadgar,et al.  Efficient stress relief in GaN heteroepitaxy on Si(1 1 1) using low-temperature AlN interlayers , 2003 .

[5]  Su-hee Chae,et al.  Growth of high-quality InGaN/GaN LED structures on (1 1 1) Si substrates with internal quantum efficiency exceeding 50% , 2011 .

[6]  J. Bläsing,et al.  Growth of blue GaN LED structures on 150-mm Si(1 1 1) , 2006 .

[7]  Pierre Gibart,et al.  Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy , 2001 .

[8]  Yang Cui-bai,et al.  Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer , 2011 .

[9]  K. Wong,et al.  Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper. , 2011, Optics Express.

[10]  J. Freitas,et al.  Properties of Si-doped GaN films grown using multiple AlN interlayers , 1999 .

[11]  H. Amano,et al.  Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers , 1998 .

[12]  刘喆,et al.  The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si (111) substrates , 2007 .

[13]  T. Egawa,et al.  High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD , 2010 .