Auger lifetime in InAs, InAsSb, and InAsSb-InAlAsSb quantum wells

The intensity‐dependent photoconductive response to 2.06 μm excitation has been used to determine Shockley‐Read and Auger lifetimes for InAs, InAs0.91Sb0.09, and an InAs0.85Sb0.15‐InAlAsSb multiple quantum well. The Auger rate at 77 K correlates with the proximity to resonance between the energy gap and the split‐off gap. Thus the Auger coefficient in the alloy decreases with decreasing temperature, whereas that in the quantum well increases by nearly a factor of 5 between 300 and 77 K.