Effect of crystallinity on endurance and switching behavior of HfOx-based resistive memory devices
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N. C. Cady | N. Cady | R. Matyi | B. Briggs | S. Bishop | S. M. Bishop | B. D. Briggs | R. J. Matyi | J. O. Capulong | M. Q. Hovish | M. Hovish | J. Capulong
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