论文信息 - Charged particle multi-beam lithography evaluations for sub-16nm hp mask node fabrication and wafer direct write

Charged particle multi-beam lithography evaluations for sub-16nm hp mask node fabrication and wafer direct write

A detailed evaluation study has been performed with respect to the suitability of projection electron and ion multi-beam lithography for the fabrication of leading-edge complex masks. The study includes recent results as obtained with electron and ion multi-beam proof-of-concept systems with 200x reduction projection optics where patterns are generated on substrates using a programmable aperture plate system (APS) with integrated CMOS electronics, generating several thousands of well defined beams in parallel. A comparison of electron and ion projection multi-beam writing is provided, in particular with respect to the suitability to expose non-chemically amplified resist (non-CAR) materials. The extendibility of projection multi-beam technologies for 16nm hp, 11nm hp and 8nm hp mask nodes is discussed as well as for wafer direct write for 22nm hp and below.

[1] Karl K. Berggren,et al. Using high-contrast salty development of hydrogen silsesquioxane for sub-10‐nm half-pitch lithography , 2007 .

[2] Elmar Platzgummer,et al. Projection maskless patterning (PMLP) for the fabrication of leading-edge complex masks and nano-imprint templates , 2007, SPIE Photomask Technology.

[3] Elmar Platzgummer,et al. Go proton: investigation on mask patterning for the 22nm hp node using a ML2 multibeam system , 2009, Photomask Japan.

[4] C. Hohle,et al. PML2: the maskless multibeam solution for the 22nm node and beyond , 2009, Advanced Lithography.

[5] Elmar Platzgummer,et al. Results obtained with the CHARPAN Engineering Tool and prospects of the ion Mask Exposure Tool (iMET) , 2008, Photomask Technology.