A 16384-bit high-density CCD memory

A 16384-bit charge-coupled device (CCD) memory has been developed for mass storage memory system application where moderate latency, high data rate and low system cost are required. The chip measures only 3.45/spl times/4.29 mm/SUP 2/ (136/spl times/169 mil/SUP 2/), fits a standard 16-pin package, and is organized as four separate shift registers of 4096 bits, each with its own data input and data output terminals. A two-level polysilicon gate n-channel process was used for device fabrication. A condensed serial-parallel-serial (CSPS) structure was found to provide the highest packing density. Only two external clocks are required driving capacitances of 60 pF each at one-half the data transfer rate. Operations at data rates of 100 kHz to 10 MHz have been demonstrated experimentally, the on-chip power dissipation at 10 MHz being less than 20 /spl mu/W/bit.

[1]  E. Doering,et al.  Storage array and sense/refresh circuit for single-transistor memory cells , 1972 .

[2]  Dennis D. Buss,et al.  CCD memory options , 1973 .

[3]  S.D. Rosenbaum,et al.  8192-bit block addressable CCD memory , 1975, IEEE Journal of Solid-State Circuits.

[4]  M.R. Guidry,et al.  A CCD line addressable random-access memory (LARAM) , 1975, IEEE Journal of Solid-State Circuits.